to-254 050-7137 rev a 4-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com super junction mosfet c power semiconductors o o l mos ? ultra low r ds ( on ) ? low miller capacitance ? ultra low gate charge, q g ? avalanche energy rated ? hermetic to-254 package APT20N60CC3 600v 14a 0.210 ? ? ? ? ? characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d =13.1a) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = v dss , v gs = 0v, t j = 150c) gate-source leakage current (v gs = 20v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 600 0.18 0.21 0.05 25 250 100 2.1 3 3.9 symbol v dss i d i dm v gs v gsm p d t j ,t stg t l dv / dt i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. drain-source voltage slope (v ds = 480v, i d = 14a, t j = 125c) repetitive avalanche current 6 repetitive avalanche energy 6 single pulse avalanche energy 4 unit volts amps volts watts w/c c v/ns amps mj APT20N60CC3 600 14 42 20 30 104 0.83 -55 to 150 300 50 20 1 690 "coolmos ? comprise a new family of transistors developed by infineon technologies ag. "coolmos" is a trade- mark of infineon technologies ag"
dynamic characteristics APT20N60CC3 050-7137 rev a 4-2004 thermal characteristics symbol r jc r ja min typ max 1.20 62 unit c/w characteristic junction to case junction to ambient symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 0 to10v v dd = 480v i d = 20a @ 25c v gs = 13v v dd = 380 v i d = 20a r g = 3.6 ?, t j = 125c min typ max 2440 860 50 90 114 13 45 10 5 65 100 512 unit pf nc ns characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time current rise time turn-off delay time current fall time source-drain diode ratings and characteristics unit amps volts ns c v/ns min typ max 14 42 1 1.2 500 800 11 6 symbol i s i sm v sd t rr q rr dv / dt characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -14a) reverse recovery time (i s = -14a, dl s /dt = 100a/s) v r = 480v reverse recovery charge (i s = -14a, dl s /dt = 100a/s) v r = 480v peak diode recovery dv / dt 5 to - 254 package outline 3.81 (.150) bsc 1.14 (.045) .89 (.035) dia. typ. 3 leads 13.84 (.545) 13.59 (.535) 31.37 (1.235) 30.35 (1.195) 13.84 (.545) 13.59 (.535) 3.78 (.149) 3.53 (.139) 1.27 (.050) 1.02 (.040) 6.60 (.260) 6.32 (.249) 3.81 (.150) bsc 6.91 (.272) 6.81 (.268) drain source gate dia. 20.32 (.800) 20.06 (.790) 17.40 (.685) 16.89 (.665) dimensions in millimeters and (inches) apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 13.80mh, r g = 25 ? , peak i l = 10a 5 i s - i d 20a di / dt 700a/s v r v dss t j 150 c 6 repetitve avalanche causes additional power losses that can be calculated as p av =e ar *f apt reserves the right to change, without notice, the specifications and information contained herein.
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